Spatial Control of Charge Doping in n-Type Topological Insulators
Sakamoto K., Ishikawa H., Wake T., Ishimoto C., Fujii J., Bentmann H., Ohtaka M., Kuroda K., Inoue N., Hattori T., Miyamachi T., Komori F., Yamamoto I., Fan C., Krüger P., Ota H., Matsui F., Reinert F., Avila J., Asensio M.C.
Spatially controlling the Fermi level of topological insulators and keeping their electronic states stable are indispensable processes to put this material into practical use for semiconductor spintronics devices. So far, however, such a method has not been established yet. Here we show a novel method for doping a hole into n-type topological insulators Bi2X3 (X= Se, Te) that overcomes the shortcomings of the previous reported methods. The key of this doping is to adsorb H2O on Bi2X3 decorated with a small amount of carbon, and its trigger is the irradiation of a photon with sufficient energy to excite the core electrons of the outermost layer atoms. This method allows controlling the doping amount by the irradiation time and acts as photolithography. Such a tunable doping makes it possible to design the electronic states at the nanometer scale and, thus, paves a promising avenue toward the realization of novel spintronics devices based on topological insulators.
TD-EDP measured at hν = 20–100 eV using a light spot of 100 μm. The circles represent the experimental results, and the curves overlapping them are the fitting results.