Visualizing the Effect of an Electrostatic Gate with Angle-Resolved Photoemission Spectroscopy
Frédéric Joucken, Jose Avila, Zhehao Ge, Eberth A. Quezada-Lopez, Hemian Yi, Romaric Le Goff, Emmanuel Baudin, John L. Davenport, Kenji Watanabe, Takashi Taniguchi, Maria Carmen Asensio, and Jairo Velasco Jr.
Electrostatic gating is pervasive in materials science, yet its effects on the electronic band structure of materials has never been revealed directly by angle-resolved photoemission spectroscopy (ARPES), the technique of choice to noninvasively probe the electronic band structure of a material. By means of a state-of-the-art ARPES setup with submicron spatial resolution, we have investigated a heterostructure composed of Bernal-stacked bilayer graphene (BLG) on hexagonal boron nitride and deposited on a graphite flake. By voltage biasing the latter, the electric field effect is directly visualized on the valence band as well as on the carbon 1s core level of BLG. The band gap opening of BLG submitted to a transverse electric field is discussed and the importance of intra layer screening is put forward. Our results pave the way for new studies that will use momentum-resolved electronic structure information to gain insight on the physics of materials submitted to the electric field effect.
