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Through this ICMM space slack account you will be able to navigate the funk, padel, soccer, dance, articles-icmm, scientic-questions channel and many other things such as helping the new icmm-nautas. You can also open your own #channel to find people who share your interests. Join us! Read more

About

The Instituto de Ciencia de Materiales de Madrid (ICMM) is an institute of the Consejo Superior de Investigaciones Cientificas (CSIC) (Spanish National Research Council) founded in December 1986, that belongs to the Area of Science and Technology of Materials, one of the eight Areas in which the CSIC divides its research activities.

 

Our mission is to create new fundamental and applied knowledge in materials of high technological impact, their processing and their transfer to the productive sectors at local, national and European scales (the true value of materials is in their use), the training of new professionals, and the dissemination of the scientific knowledge.

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Forthcoming Events

JAN24/12:00

Topological Wilson-Hubbard matter: a bridge between condensed matter and high-energy physics
Alejandro Bermúdez  read more

JAN28/10:30

Infrared spectromicroscopy and imaging with six decades of dynamic range
Ferenc Borondics  read more

JAN28/12:00

2018 Nobel Prize in Physics, Part II:
Ultraintense Ultrashot Lasers: New Scientific Applications Allowed by the CPA Technology

Prof. Luis Roso   read more

News

Ricardo García, del ICMM, recibirá la distinción Beller lectureship de la American Physical Society durante el March Meeting de la APS (Boston, 4-8 Marzo, 2019)

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Direct Patterning of p-Type-Doped Few-layer WSe2 Nanoelectronic Devices by Oxidation Scanning Probe Lithography

A. I. Dago, Y. K. Ryu, F. J. Palomares, and R. Garcia

Direct, robust, and high-resolution patterning methods are needed to downscale the lateral size of two-dimensional materials to observe new properties and optimize the overall processing of these materials. In this work, we report a fabrication process where the initial microchannel of a few-layer WSe2 field-effect transistor is treated by oxygen plasma to form a self-limited oxide layer on top of the flake. This thin oxide layer has a double role here. First, it induces the so-called p-doping effect in the device. Second, it enables the fabrication of oxide nanoribbons with controlled width and depth by oxidation scanning probe lithography (o-SPL). After the removal of the oxides by deionized H2O etching, a nanoribbon-based field-effect transistor is produced. Oxidation SPL is a direct writing technique that minimizes the use of resists and lithographic steps. We have applied this process to fabricate a 5 nm thick WSe2 field-effect transistor, where the channel consists in an array of 5 parallel 350 nm half-pitch nanoribbons. The electrical measurements show that the device presents an improved conduction level compared to the starting thin-layer transistor and a positive threshold voltage shift associated to the p-doping treatment. The method enables to pattern devices with sub-50 nm feature sizes. We have patterned an array of 10 oxide nanowires with 36 nm half-pitch by oxidation SPL.

ACS Appl. Mater. Interfaces

ICMM-2019 - Sor Juana Inés de la Cruz, 3, Cantoblanco, 28049 Madrid, Spain. Tel: +34 91 334 9000. info@icmm.csic.es