By Nicolas Leconte, from the University of Seoul
Where: Sala de Seminarios, 182
Abstract: In my talk, I illustrate our methodology to obtain the electronic properties of materials based on lattice calculations, both at the level of the lattice relaxations and the tight-binding electronic structure calculations. I illustrate this approach on a variety of materials, including twisted bilayer graphene (tBG), alternated twisted multilayer graphene (tNG), t2G on hBN (t2G/hBN), graphene on hBN (GBN) and hBN-encapsulated bilayer graphene (hBN/BG/hBN), while focusing on relevant physics for each of these systems, from magic angle flat band signatures (tBG and tNG), primary and secondary gap behavior in presence of a substrate (GBN), commensuration torques (t3G and t2G/hbN) and substrate-induced layer polarization of BG (hBN/BG/hBN).
