Author: Engin Durgun, UNAM - National Nanotechnology Research Center and Institute of Materials Science and Nanotechnology, Bilkent University (Ankara, Turkey)
When: April 7th , 15:00h
Where: Sala de Seminarios, ICMM
Abstract: During the last decade, there has been growing interest in two-dimensional (2D) materials due to their unique chemical, mechanical, electronic, and optical properties. The advent of 2D materials has transformed the field of nanotechnology, opening new avenues for the design of miniaturized electronic devices. In this study, we explore the ab initio investigation of 2D materials, focusing on their unique electronic transport properties and potential applications in next-generation electronic devices. Utilizing density functional theory (DFT) simulations in conjunction with the Nonequilibrium Green’s Function (NEGF) method, we investigate the quantum mechanical behavior of electronic transport properties of emerging 2D semiconductors. Emphasis is placed on understanding the underlying mechanisms that govern charge carrier mobility, band structure modulation, and effects of external factors on device performance in the ballistic region. Furthermore, we discuss the challenges and opportunities in engineering device architectures at the nanoscale, including metal-semiconductor-metal (Schottky) systems, p-n junctions, and transistor (MOSFET) designs. This investigation not only highlights the theoretical underpinnings of 2D material-based devices but also provides insights into their practical implications for the future of miniaturized electronics.
