Micro and Nanofabrication

Scientists in charge

Dr. Lourdes Calzada (Research Professor)
Dr. Rafael Jiménez (Senior Scientist)
Dr. Álvaro Blanco (Senior Scientist)

Technician

Dr. Francisco Espinosa (Specialized Technician)

Contact

+34 913349000 ext. 437013 / 132
+34 917165992 (direct number)

Location

Lab 013 (Clean room)
Lab 145 (Glove Box)
ICMM-CSIC, Calle Sor Juana Inés de la Cruz, 3 28049 Madrid, España

The Micro and Nanofabrication Clean Room is dedicated to developing innovative technologies in the field of Materials Science together with other emerging Micro and Nanotechnologies. The facility has a high-resolution mask aligner and different coating and etching technologies, such as ALD, e-beam, sputtering, Reactive Ion Etching or oxygen plasma treatment.

Equipment and services:

High-Resolution UV Lithography. (SÜSS MicroTec MJB4 Mask Aligner)

The MJB4 Mask Aligner offers high-precision mask alignment and high-resolution printing capability in the submicron range (~1 µm). It is equipped with a WEC head system that allows reaching the parallelism between substrate and mask with a micrometric precision.
Wafer Size 1 up to 100 mm / 4" (round)
Max. Substrate Size 100 x 100 mm
Contact: soft, hard, vacuum, soft vacuum

Spin Coater. (SMA SPINNER 6000 Pro) and filtration fume.
Deposition of uniform layers of material on a substrate by centrifugation. The maximum speed it reaches is 6000 rpm.
Wafer Size 1 up to 100 mm / 4"

Low – pressure Plasma System. (Tetra Diener Electronic)
Removal or cleaning of organic materials from a substrate using oxygen plasma. This process is also used for material treatment.
Power: 200W (at 40Hz)
Base Pressure: 0.6 mbar

Atomic Layer Deposition. (CTECHnano Coating Technologies, Play Series
ALD has a cylindrical-shaped chamber, designed to ensure a consistent flow. It is highly versatile and can handle a wide variety of substrates and materials for deposition.
Precursors system with 4 lines.
Temperature Range: 0-200ºC (resolution 1ºC).
Control system: gas flow, temperatures, pressure, and valves.
Base Pressure: 10-3 mbar

E-Beam Evaporator. (EVM-6 Ferrotec)
The electron beam evaporator is specifically designed to perform metal coatings with a variety of materials (Au, Ti, Cr, Pt, Ni...) in high vacuum.
Power: 6KW
Acceleration Voltage: 4-10 KV
Max. Filament current 50A
Spot Size Diameter <3 mm
Max. Evaporation Rate: 12.000 Å /min
Base Pressure: 10-7 mbar

Sputtering
Sputtering is used for the controlled growth of nanometric thin films.
Wafer Size 1 up to 100 mm / 4" (round)
Max. power, watts DC/ RF: 600 W DC / 400 W RF
Max. voltage DC: 1000 V
Max. current DC: 5 A
Base Pressure: 10-5 mbar

Reactive Ion Etching. (NRE300 RIE System)
RF Power: 200W
Base Pressure: 10-5 Torr
Gases: SF6, Ar, O2, CF4

Glove Box. (Jacomex)
Four-glove dry box with humidity and oxygen up to 1 ppm control and integrated spin coater. It is designed for the handling of products or samples which are sensitive to atmospheric component in an environment under neutral gas (Ar).