Ersu G., Munuera C., Mompean F.J., Vaquero D., Quereda J., Rodrigues J.E.F.S., Alonso J.A., Flores E., Ares J.R., Ferrer I.J., Al-Enizi A.M., Nafady A., Kuriakose S., Island J.O., Castellanos-Gomez A.
Energy and Environmental Materials
We present a method to fabricate handcrafted thermoelectric devices on standard office paper substrates. The devices are based on thin films of WS2, Te, and BP (P-type semiconductors) and TiS3 and TiS2 (N-type semiconductors), deposited by simply rubbing powder of these materials against paper. The thermoelectric properties of these semiconducting films revealed maximum Seebeck coefficients of (+1.32 ± 0.27) mV/K and (-0.82 ± 0.15) mV/K for WS2 and TiS3, respectively. Additionally, Peltier elements were fabricated by interconnecting the P-type and N-type films with graphite electrodes. A thermopower value up to 6.11 mV/K was obtained when the Peltier element is constructed with three junctions. The findings of this work show proof-of-concept devices to illustrate the potential application of semiconducting van der Waals materials in future thermoelectric power generation as well as temperature sensing for low-cost disposable electronic devices. This article is protected by copyright. All rights reserved.
