About

The Instituto de Ciencia de Materiales de Madrid (ICMM) is an institute of the Consejo Superior de Investigaciones Cientificas (CSIC) (Spanish National Research Council) founded in December 1986, that belongs to the Area of Science and Technology of Materials, one of the eight Areas in which the CSIC divides its research activities.

 

Our mission is to create new fundamental and applied knowledge in materials of high technological impact, their processing and their transfer to the productive sectors at local, national and European scales (the true value of materials is in their use), the training of new professionals, and the dissemination of the scientific knowledge.

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Forthcoming Events

MAR31/12:00

INORGANIC MULTIFUNCTIONAL NANOSTRUCTURES BASED ON IRON OXIDE
Yurena Luengo Morató  read more

APR03/12:00

Floquet and dissipative engineering in mesoscopic systems
Mónica Benito González  read more

APR04/12:00

Graphene: the good, the bad, the nano & the pseudo
Cristiane Morais Smith  read more

News

Polvo de estrellas ‘made in Spain’. Columna de opinión de Rosa Montero, sobre el proyecto NANOCOSMOS del ICMM, en la revista el Informador.mx

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Perovskita híbrida para fabricar células solares más baratas. Grupo Electronics and Magnetic materials and Heterostructures, ICMM.

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Current-Induced Generation and Synchronous Motion of Highly Packed Coupled Chiral Domain Walls

Rafael P. del Real, Victor Raposo, Eduardo Martinez and Masamitsu Hayashi

Chiral domain walls of Neel type emerge in heterostructures that include heavy metal (HM) and ferromagnetic metal (FM) layers owing to the Dzyaloshinskii–Moriya (DM) interaction at the HM/FM interface. In developing storage class memories based on the current induced motion of chiral domain walls, it remains to be seen how dense such domain walls can be packed together. Here we show that a universal short-range repulsion that scales with the strength of the DM interaction exists among chiral domain walls. The distance between the two walls can be reduced with the application of the out-of-plane field, allowing the formation of coupled domain walls. Surprisingly, the current driven velocity of such coupled walls is independent of the out-of-plane field, enabling manipulation of significantly compressed coupled domain walls using current pulses. Moreover, we find that a single current pulse with optimum amplitude can create a large number of closely spaced domain walls. These features allow current induced generation and synchronous motion of highly packed chiral domain walls, a key feature essential for developing domain wall based storage devices.

Nano Lett.

Publications Highlights

ICMM-2017 - Sor Juana Inés de la Cruz, 3, Cantoblanco, 28049 Madrid, Spain. Tel: +34 91 334 9000. Fax: +34 91 372 0623. info@icmm.csic.es