The Instituto de Ciencia de Materiales de Madrid (ICMM) is an institute of the Consejo Superior de Investigaciones Cientificas (CSIC) (Spanish National Research Council) founded in December 1986, that belongs to the Area of Science and Technology of Materials, one of the eight Areas in which the CSIC divides its research activities.
Our mission is to create new fundamental and applied knowledge in materials of high technological impact, their processing and their transfer to the productive sectors at local, national and European scales (the true value of materials is in their use), the training of new professionals, and the dissemination of the scientific knowledge.
Low dimensional Fe3O4 y Fe(1-x)O: an ab-initio approach Iván Bernal read more>
Jornada de Jóvenes Investigadores del ICMM Organizadoras: Lucía Gutierrez, Marzia Marciello, Rocío Costo, Violeta Barranco read more>
Formation of titanium monoxide (001) single-crystalline thin film induced by ion bombardment of titanium dioxide (110)
J.I. Beltrán, J. Rubio-Zuazo, P. Ferrer, M.C. Muñoz, y G.R. Castro et al
A plethora of technological applications justify why ?titanium dioxide is probably the most studied oxide, and an optimal exploitation of its properties quite frequently requires a controlled modification of the surface. Low-energy ion bombardment is one of the most extended techniques for this purpose and has been recently used in titanium oxides, among other applications, to favour resistive switching mechanisms or to form transparent conductive layers. Surfaces modified in this way are frequently described as reduced and defective, with a high density of oxygen vacancies. Here we show, at variance with this view, that high ion doses on ?rutile ?titanium dioxide (110) induce its transformation into a nanometric and single-crystalline ?titanium monoxide (001) thin film with rocksalt structure. The discovery of this ability may pave the way to new technical applications of ion bombardment not previously reported, which can be used to fabricate heterostructures and interfaces.