The Instituto de Ciencia de Materiales de Madrid (ICMM) is an institute of the Consejo Superior de Investigaciones Cientificas (CSIC) (Spanish National Research Council) founded in December 1986, that belongs to the Area of Science and Technology of Materials, one of the eight Areas in which the CSIC divides its research activities.
Our mission is to create new fundamental and applied knowledge in materials of high technological impact, their processing and their transfer to the productive sectors at local, national and European scales (the true value of materials is in their use), the training of new professionals, and the dissemination of the scientific knowledge.
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Thermal Scanning Probe Lithography: nano-patterning and nano-devices with high-resolution, within less processing steps, on novel materials Yu Kyoung Ryu Cho read more
Quantum Hall ferromagnetism in multicomponent systems Angelika Knothe read more
Líquidos Iónicos en Tribología e Ingeniería de Superficies María Dolores Bermúdez Olivares read more
Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides
Joshua O. Island, Aday J. Molina-Mendoza, Mariam Barawi, Robert Biele, Eduardo Flores, José M. Clamagirand, José R. Ares, Carlos Sánchez, Herre S. J. van der Zant, Roberto D'Agosta, Isabel J. Ferrer and Andres Castellanos-Gomez
The isolation of graphene and transition metal dichalcongenides has opened a veritable world to a great number of layered materials which can be exfoliated, manipulated, and stacked or combined at will. With continued explorations expanding to include other layered materials with unique attributes, it is becoming clear that no one material will fill all the post-silicon era requirements. Here we review the properties and applications of layered, quasi-1D transition metal trichalcogenides (TMTCs) as novel materials for next generation electronics and optoelectronics. The TMTCs present a unique chain-like structure which gives the materials their quasi-1D properties such as high anisotropy ratios in conductivity and linear dichroism. The range of band gaps spanned by this class of materials (0.2 eV–2eV) makes them suitable for a wide variety of applications including field-effect transistors, infrared, visible and ultraviolet photodetectors, and unique applications related to their anisotropic properties which opens another degree of freedom in the development of next generation electronics. In this review we survey the historical development of these remarkable materials with an emphasis on the recent activity generated by the isolation and characterization of atomically thin titanium trisulfide (TiS3).