The Instituto de Ciencia de Materiales de Madrid (ICMM) is an institute of the Consejo Superior de Investigaciones Cientificas (CSIC) (Spanish National Research Council) founded in December 1986, that belongs to the Area of Science and Technology of Materials, one of the eight Areas in which the CSIC divides its research activities.


Our mission is to create new fundamental and applied knowledge in materials of high technological impact, their processing and their transfer to the productive sectors at local, national and European scales (the true value of materials is in their use), the training of new professionals, and the dissemination of the scientific knowledge.



Forthcoming Events


Perpendicular magnetic anisotropy: from ultralow power spintronics to cancer therapy
Russell Cowburn  read more


Interaction of ferromagnetic and superconducting permanent magnets - superconducting levitation
Ludwig Schultz  read more


Anderson localization and topological transition in Chern insulators
Mª. Ángeles Vozmediano  read more


Mención de Honor al trabajo: “Nanocosmos en la revista Astronomía", de Natalia Ruiz del ICMM.

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Artículo de J. Cernicharo, J. A. Martín-Gago y C. Joblin sobre el proyecto Nanocosmos

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Tunable Dirac Electron and Hole Self-Doping of Topological Insulators Induced by Stacking Defects

H. Aramberri, J. I. Cerdá, M. C. Muñoz et al

Via density functional theory based calculations we show that self-doping of the surface Dirac cones in three-dimensional Bi2X3 (X = Se, Te) topological insulators can be tuned by controlling the sequence of stacking defects in the crystal. Twin boundaries inside the Bi2X3 bulk drive either n- or p-type self-doping of the (0001) topological surface states, depending on the precise orientation of the twin. The surface doping may achieve values up to 300 meV and can be controlled by the number of defects and their relative position with respect to the surface. Its origin relies on the spontaneous polarization generated by the dipole moments associated with the lattice defects. Our findings open the route to the fabrication of Bi2X3 surfaces with tailored surface charge and spin densities in the absence of external electric fields. In addition, in a thin film geometry two-dimensional electron and hole Dirac gases with the same spin-helicity coexist at opposite surfaces.

Nano Letters

Crystal structure for some of the Bi2Se3 polytypes considered. Se (Bi) atoms are shown in red (blue). (a) Ideal defect-free case, (b) SF4 structure with a SF every two QLs, (c) TB4 structure with a TB every two QLs

Publications Highlights

ICMM-2015 - Sor Juana Inés de la Cruz, 3, Cantoblanco, 28049 Madrid, Spain. Tel: +34 91 334 9000. Fax: +34 91 372 0623. info@icmm.csic.es