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The Instituto de Ciencia de Materiales de Madrid (ICMM) is an institute of the Consejo Superior de Investigaciones Cientificas (CSIC) (Spanish National Research Council) founded in December 1986, that belongs to the Area of Science and Technology of Materials, one of the eight Areas in which the CSIC divides its research activities.


Our mission is to create new fundamental and applied knowledge in materials of high technological impact, their processing and their transfer to the productive sectors at local, national and European scales (the true value of materials is in their use), the training of new professionals, and the dissemination of the scientific knowledge.

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Forthcoming Events


Phonons or phasons? The influence of soliton fluctuations on the electronics of Moiré-patterned materials.
Hector Ochoa  read more


Revealing the fine structure of Andreev bound states in hybrid nanowires
Alfredo Levy Yeyati   read more


Fabricación de nanodispositivos electrónicos de materiales bidimensionales mediante la nanolitografía de oxidación local
Arancha Iglesias del Dago  read more

Discrete Electronic Subbands due to Bragg Scattering at Molecular Edges

A. Martín-Jiménez, J. M. Gallego, R. Miranda, and R. Otero

The discretization of the electronic structure of nanometer-size solid systems due to quantum confinement and the concomitant modification of their physical properties is one of the cornerstones for the development of nanoscience and nanotechnology. In this Letter we demonstrate that the Bragg scattering of Cu(111) surface-state electrons by the periodic arrangement of tetracyanoquinodimethane molecules at the edges of self-assembled molecular islands, along with the dominant contribution of backscattering processes to the electronic density of states, discretizes the possible values of the electron momentum parallel to the island edge. The electronic structure consists thus of a discrete number of subbands which occur in a nonclosed space, and therefore without quantum confinement.

Phys. Rev. Lett.

(a) STM image (30.2×30.2nm2Vbias=1.4VIt=150pA) of the edge of a TCNQ island, showing the bulk and edge molecular arrangements. The rhomboidal unit cell is shown. (b) 1D Fourier transform (FT) of a scan line over the island edge. (c) 2D FT of the island bulk. Black tick marks correspond to the peaks in the 1D FT that correspond to the projection of the bulk reciprocal space over the edge direction, while red ticks mark the position of the new peaks due to the edge periodicity. (d) STM image (26.3×8.6nm2It=150pA) recorded at low voltage (Vbias=100meV), where the standing wave pattern of the Cu(111) surface state is visible.

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