Description:

Study of materials, bulk, heterostructures and nanostructures mainly based on oxides in order to explore new concepts for magnetoelectronic and optoelectronic devices and sensors and optimise existing ones. Oxides are relevant from the point of view of their applications, but our approach is focused on fundamental issues.

 

Keywords:

Magnetic; electronic; magnetoelectronic; transport properties; heteroestructures; thin films; nanostructures; oxides; high pressure synthesis; oxide electronics; spintronics; optoelectronics, elastic properties; multiferroics; hybrid organic-inorganic; magnetic structures.

 

Objectives:

To generate fundamental knowledge on the structure, properties and mechanisms taking place in magnetic and electronic devices in relation to their application in present and emerging information technologies.

More specifically we aim at designing and engineering oxide materials exhibiting strong electronic correlations which are responsible for properties such as superconductivity, metallic behaviour and metal-insulator transitions or colossal magnetoresistance. In many cases the preparation of metastable materials will be carried out under high pressure or special conditions (soft chemistry, controlled atmosphere). The subsequent preparation of materials is an iterative process that relies on the previous characterization of the bulk materials, where the properties of interest should be optimized and understood prior to the conformation of these materials into low-dimensional and nano structures.

Moreover, in our modern knowledge-based society, alternative operation mechanisms for new concept devices and new architectures for well known materials need to be found, since conventional design may no longer be suitable to satisfy the increasing demand for downsizing.

Indeed, some of the most amazing states and applications that perovskites present can only be realized in heterostructures conformed by ultrathin layers. Within this landscape and in order to remain competitive in a field where we have accumulated an important “know-how”  (i. e. perovskites and thin film growth and characterization) we are prompted to follow the actual trend and push our capabilities to explore new device concepts ( exploring new phenomena at interfaces), to optimize the operating mechanism upon which the current information technologies are based, and to enter the nanoscale (vertical and lateral dimensions) in the proccessing of ultrathin films to conform usefull heteroestructures.

There is a closed feeback loop existing between bulk and low dimension work, since the implementation of such materials in devices, useful for technical applications, requires the design and growth of the mentioned thin-layered, nanostructured or heterostructured materials, which thus form a indivisible tandem with the bulk precursors of origin.