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Most cited papers

  • E. E. Mendez, F. Agulló-Rueda, and J. M. Hong, "Stark Localization in GaAs-GaAlAs Superlattices under an Electric Field," Phys. Rev. Lett. 60, 2426—2429 (1988).

    Times Cited: 728

  • H. Ohno, E. E. Mendez, J. A. Brum, J. M. Hong, F. Agulló-Rueda, L. L. Chang, and L. Esaki, "Observation of Tamm States¨ in Superlattices," Phys. Rev. Lett. 64, 2555—2558 (1990).

    Times Cited: 127

  • F. Agulló-Rueda, E. E. Mendez, and J. M. Hong, "Quantum coherence in semiconductor superlattices," Phys. Rev. B (Rapid Communications) 40, 1357—1360 (1989).

    Times Cited: 124

  • B. Ballesteros, G. de la Torre, C. Ehli, G. M. Aminur Rahman, F. Agulló-Rueda, D. M. Guldi, and T. Torres, "Single-wall carbon nanotubes bearing covalently linked phthalocyanines – Photoinduced electron transfer," J. Am. Chem. Soc. 129, 5061—5068 (2007).

    Times Cited: 105

  • J. Mendiola, M. L. Calzada, P. Ramos, M. J. Martín, and F. Agulló-Rueda, "On the Effects of Stresses in Ferroelectric (Pb, Ca)TiO3 Thin Films," Thin Solid Films 315, 195—201 (1998).

    Times Cited: 53

  • F. Agulló-Rueda, E. E. Mendez, H. Ohno, and J. M. Hong, "Interactions between extended and localized states in superlattices," Phys. Rev. B 42, 1470—1473 (1990).

    Times Cited: 50

  • E. E. Mendez and F. Agulló-Rueda, "Optical properties of quantum wells and superlattices under electric fields," J. Lumin. 44, 223—232 (1989).

    Times Cited: 44

  • E. E. Mendez, F. Agulló-Rueda, and J. M. Hong, "Temperature Dependence of the Electronic Coherence of GaAs-GaAlAs Superlattices," Appl. Phys. Lett. 56, 2545—2547 (1990).

    Times Cited: 43

  • F. Agulló-Rueda, E. E. Mendez, and J. M. Hong, "Doubly Resonant Raman Scattering Induced by an Electric Field," Phys. Rev. B 38, 12 720—12 723 (1988).

    Times Cited: 43

  • N. V. Sochinskii, M. D. Serrano, E. Diéguez, F. Agulló-Rueda, U. Pal, J. Piqueras, and P. Fernández, "Effect of Thermal Annealing on Te Precipitates in CdTe Wafers Studied by Raman Scattering and Cathodoluminescence," J. Appl. Phys. 77, 2806—2808 (1995).

    Times Cited: 34

  • M. A. Bañares, J. H. Cardoso, F. Agulló-Rueda, J. M. Correa-Bueno, and J. L. G. Fierro., "Dynamic states of V‐oxide species: reducibility and performance for methane oxidation on V2O5/SiO2 catalysts as a function of coverage," Catal. Lett. 64, 191—196 (2000).

    Times Cited: 32

  • J. Olivares, G. García, F. Agulló-López, F. Agulló-Rueda, A. Kling, and J. C. Soares, "Generation of amorphous surface layers in LiNbO3 by ion-beam irradiation: thresholding and boundary propagation," Appl. Phys. A 81, 1465—1469 (2005).

    Times Cited: 30

  • V. Torres-Costa, F. Agulló-Rueda, R. J. Martín-Palma, and J. M. Martínez-Duart, "Porous silicon optical devices for sensing applications," Opt. Mater. 27, 1084—1087 (2005).

    Times Cited: 30

  • F. Agulló-Rueda, J. A. Brum, E. E. Mendez, and J. M. Hong, "Change in dimensionality of superlattice excitons induced by an electric field," Phys. Rev. B 41, 1676—1679 (1990).

    Times Cited: 29

  • S. Manotas, F. Agulló-Rueda, J. D. Moreno, F. Ben-Hander, and J. M. Martínez-Duart, "Lattice-Mismatch Induced Stress in Porous Silicon Films," Thin Solid Films 401, 306—309 (2001).

    Times Cited: 28

  • J. D. Moreno, F. Agulló-Rueda, E. Montoya, M. L. Marcos, J. González-Velasco, R. Guerrero-Lemus, and J. M. Martínez-Duart, "Depth-resolved micro-Raman study of porous silicon at different oxidation states," Appl. Phys. Lett. 71, 2166—2168 (1997).

    Times Cited: 26

Full list of papers